| PART |
Description |
Maker |
| UF640VL-T3P-T UF640VL-TA3-T |
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRF640S 6774 |
N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAY TM MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| FDPF18N20F |
N-Channel MOSFET, FRFET 200V, 18A, 0.145ヘ
|
Fairchild Semiconductor
|
| IRF640 IRF640FP |
N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET
|
ST Microelectronics
|
| IRF640FP IRF640 3007 |
N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET
From old datasheet system
|
STMicro
|
| OM6010CSA |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 18A条（丁）|54AA
|
Diodes, Inc.
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| IRF5Y5305CM |
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
